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| Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 s Applications 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.3 3.00.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 30 8 16 130 50 2 150 -55 to +150 Unit V V A A mJ W C C 7 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 4A VDD = 150V, RL = 37.5 Conditions VDS = 360V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1300 VDS = 20V, VGS = 0, f = 1MHz 160 70 25 45 50 150 2.5 3 450 2 0.56 5 -1.7 5 0.75 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 IDP 10 ID 3 1ms 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms DC 60 2SK2124 PD Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W) 240 VDD=50V ID=8A 200 EAS Tj Non repetitive pulse TC=25C t=100s 50 Drain current ID (A) 40 (1) 30 160 120 20 80 10 (2) 0 0 20 40 60 80 100 120 140 160 40 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) ID VDS 16 14 12 10 8 6V 6 4 2 0 0 10 20 30 40 50 60 5.5V VGS=15V 10V 8 TC=25C 10 ID VGS 6 VDS=25V 25C 100C Vth TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) 7V TC=0C 150C Gate threshold voltage Vth (V) 10 12 4 6 3 4 2 2 5V 50W 0 0 2 4 6 8 1 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (C) RDS(on) ID Drain to source ON-resistance RDS(on) () VGS=10V 2.0 RDS(on) ID Drain to source ON-resistance RDS(on) () 2.4 12 | Yfs | ID Forward transfer admittance |Yfs| (S) TC=25C VDS=25V TC=25C 10 2.4 2.0 1.6 TC=150C 100C 0.8 25C 0.4 0C 1.6 8 1.2 1.2 6 0.8 VGS=10V 0.4 15V 4 2 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Drain current ID (A) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 3000 1000 300 100 Coss 30 10 3 1 0 50 100 150 200 250 Crss f=1MHz TC=25C 2SK2124 VDS, VGS Qg 400 16 14 12 10 8 6 4 VGS 50 0 0 10 20 30 40 50 2 0 60 300 ID=8A TC=25C td(on), tr, tf, td(off) ID VDD=150V VGS=10V TC=25C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 350 300 250 200 150 100 Switching time td(on),tr,tf,td(off) (ns) 250 Ciss 200 VDS 150 td(off) 100 tf 50 tr td(on) 0 0 2 4 6 8 10 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) 3 |
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